Cree, Inc. develops and manufactures semiconductor materials and devices based on silicon carbide (SiC), gallium nitride (GaN) and related compounds. The Company's SiC and GaN materials technologies are the basis for many of the devices that it develops and produces. Revenues are primarily derived from the sale of blue, green and near ultraviolet (UV) light emitting diodes (LEDs), and SiC and GaN-based materials. Cree, Inc. is also developing near UV laser devices. In addition, the Company is engaged in a variety of research programs related to the advancement of SiC and GaN process technology, and the development of electronic and optoelectronic devices that make use of these materials' physical and electronic properties. Effective December 25, 2005, Cree, Inc. discontinued the operations of its Cree Microwave segment, which includes its silicon-based radio frequency (RF) and microwave semiconductor business.
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Cree, Inc. develops and manufactures semiconductor materials and devices based on silicon carbide (SiC), gallium nitride (GaN) and related compounds. The Company's SiC and GaN materials technologies are the basis for many of the devices that it develops and produces. Revenues are primarily derived from the sale of blue, green and near ultraviolet (UV) light emitting diodes (LEDs), and SiC and GaN-based materials. Cree, Inc. is also developing near UV laser devices. In addition, the Company is engaged in a variety of research programs related to the advancement of SiC and GaN process technology, and the development of electronic and optoelectronic devices that make use of these materials' physical and electronic properties. Effective December 25, 2005, Cree, Inc. discontinued the operations of its Cree Microwave segment, which includes its silicon-based radio frequency (RF) and microwave semiconductor business.
